Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD
Wang X, Zhang Y, Wang M, Wang J, Xu K. Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD. Vacuum 2025, 235: 114135. DOI: 10.1016/j.vacuum.2025.114135.Peer-Reviewed Original ResearchMetal organic chemical vapor depositionHigh-electron-mobility transistorsEpitaxial layersTwo-dimensional electron gasAlGaN/GaN high-electron-mobility transistorsEpitaxial growthLow-temperature mobilityGaN channel layerSemi-insulating GaNFree-standing GaN substratesGaN buffer layerRadio frequencyFe impurity concentrationsElectron gasChemical vapor depositionImpurity concentrationHEMT structuresEpitaxial structureDislocation densityN-GaNLow-temperature growthGaN substratesStopper layerChannel layerSurface roughnessElectron–phonon coupling and thermal transport properties of GaN/AlGaN heterojunction under strain regulation
Chen J, Shan Z, Hu B, Wang Z, Tang D, Xu K. Electron–phonon coupling and thermal transport properties of GaN/AlGaN heterojunction under strain regulation. Physical Chemistry Chemical Physics 2025, 27: 2495-2509. PMID: 39804036, DOI: 10.1039/d4cp03880k.Peer-Reviewed Original ResearchElectron-phonon couplingIn-plane stressesTensile strainThermal transportCompressive strainPhonon frequenciesTwo-dimensional electron gasElectron-phonon coupling phenomenaSemiconductor materialsInterface thermal transportApplication of semiconductor materialsStates of phononsLow-frequency phononsFirst-principles calculationsThermoelectric properties of semiconductor materialsThermal transport propertiesBallistic phonon transportInterference of strainNon-equilibrium stateProperties of semiconductor materialsMigration of electronsThermal transport mechanismsIn-plane strainElectron gasPhonon modes
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