2025
Effect of AlN interlayer thickness on thermal conductances of GaN epilayer and GaN/SiC interface in GaN-on-SiC heterostructures
Wang L, Zhang Z, Su X, Zhou J, Chen J, Li Z, Chang G, Xia S, Yin T, Niu M, Zhu J, Tang D, Xu K. Effect of AlN interlayer thickness on thermal conductances of GaN epilayer and GaN/SiC interface in GaN-on-SiC heterostructures. Applied Surface Science 2025, 686: 162106. DOI: 10.1016/j.apsusc.2024.162106.Peer-Reviewed Original ResearchHigh electron mobility transistorsAlN interlayer thicknessGaN-on-SiCGaN epilayersAlN interlayerPhonon density of statesHeteroepitaxial growth of GaNDensity of statesAtomically smooth interfaceThermal conductivityElectron mobility transistorsTime-domain thermoreflectanceMultilayer structureEnhancement of G′Growth of GaNInterfacial thermal conductanceInterlayer thicknessMetal organic chemical vapor depositionSiC substrateMobility transistorsAlN bufferGrow GaNChemical vapor depositionIsland shapeGaN
2024
Nonequilibrium electron–phonon coupling across the interfaces between Al nanofilm and GaN
Chen J, Bao W, Wang Z, Xu K, Tang D. Nonequilibrium electron–phonon coupling across the interfaces between Al nanofilm and GaN. Physical Chemistry Chemical Physics 2024, 26: 8504-8514. PMID: 38411463, DOI: 10.1039/d3cp06054c.Peer-Reviewed Original ResearchTwo-temperature modelTime-domain thermoreflectanceHigh-energy electronsPhonon modesE-phCoupling strengthAl nanofilmGaN-based field effect transistorsNon-equilibrium transport propertiesE-ph couplingElectron-phonon couplingElectronic relaxation processesModes of phononsFemtosecond laser excitationFemtosecond laser pulsesTime-domain thermoreflectance techniqueTime-domain thermoreflectance methodField-effect transistorsLA modeLaser pulsesElectronic device designLaser excitationThickness dependencePhononsGaN substrates
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