2025
Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD
Wang X, Zhang Y, Wang M, Wang J, Xu K. Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD. Vacuum 2025, 235: 114135. DOI: 10.1016/j.vacuum.2025.114135.Peer-Reviewed Original ResearchMetal organic chemical vapor depositionHigh-electron-mobility transistorsEpitaxial layersTwo-dimensional electron gasAlGaN/GaN high-electron-mobility transistorsEpitaxial growthLow-temperature mobilityGaN channel layerSemi-insulating GaNFree-standing GaN substratesGaN buffer layerRadio frequencyFe impurity concentrationsElectron gasChemical vapor depositionImpurity concentrationHEMT structuresEpitaxial structureDislocation densityN-GaNLow-temperature growthGaN substratesStopper layerChannel layerSurface roughnessInfluence of Surface Treatments on the Ohmic Contact Performance on the N-Face of Iron-Doped Semi-Insulating Freestanding GaN
Sun Y, Zhang Y, Wang X, Zhou H, Xia S, Zhu Q, Liu W, Wang J, Xu K. Influence of Surface Treatments on the Ohmic Contact Performance on the N-Face of Iron-Doped Semi-Insulating Freestanding GaN. IEEE Transactions On Electron Devices 2025, 72: 1027-1034. DOI: 10.1109/ted.2025.3534739.Peer-Reviewed Original ResearchOhmic contact performanceOhmic contactsGaN-based devicesInfluence of surface treatmentContact performanceSurface treatmentBand bendingN-faceInductively coupled plasmaSpecific contact resistanceOptimized ohmic contactsInductively coupled plasma etchingImproved surface morphologySurface band bendingLow carrier concentrationGaOx layerElectrical performanceSemi-insulatingContact resistanceSurface statesWet etchingSurface roughnessCarrier concentrationSurface morphologyDry etching
2024
Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition
Fan S, Ikeda M, Zhang B, Li Z, Su X, Liu Z, Xu K. Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition. Journal Of Alloys And Compounds 2024, 1007: 176406. DOI: 10.1016/j.jallcom.2024.176406.Peer-Reviewed Original ResearchMetalorganic chemical vapor depositionChemical vapor depositionSurface morphologyVapor depositionPressure metalorganic chemical vapor depositionSevere parasitic reactionsAtmospheric pressure metalorganic chemical vapor depositionAtmospheric-pressure metalorganic chemical vapor depositionIn-plane uniformityLow surface roughnessV-pit densityExcellent surface morphologyAtomic force microscopyGaN/AlInN interfacesParasitic reactionsSurface roughnessGrowth temperatureSecond-order reaction modelReduced roughnessFilm thicknessAlInN filmsForce microscopyRoughness valuesCrystalline qualityElectronic devicesStep-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire
Hao J, Zhang Y, Zhang Y, Xu K, Han G, Ye J. Step-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire. Chinese Physics B 2024, 33: 086104. DOI: 10.1088/1674-1056/ad4ff6.Peer-Reviewed Original ResearchGrowth mode transitionGrowth modeDislocation densityTerrace widthCm-2Epitaxial growth modeIncreased dislocation densityNeighboring nucleiFlat sapphire surfaceTwo-dimensional (2DSurface morphology degradationSubstrate terracesVicinal sapphireMaterial propertiesSurface roughnessTerrace edgesDevice performanceMiscut angleCoherent growthSapphire substratesSemiconductor layerEdge dislocationsHeteroepitaxial layersMode transitionNucleation distance
2023
Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene
Zhou J, Xu Y, Wang X, Wang Y, Yue L, Wang J, Cao B, Xu K. Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene. 2023, 00: 161-164. DOI: 10.1109/sslchinaifws60785.2023.10399753.Peer-Reviewed Original ResearchGaN filmsAlN/sapphire templatesEpitaxial GaN thin filmsGrowth of GaN filmsGrowth of high-quality GaN filmsGaN thin filmsHigh-quality GaN filmsEpitaxial growthOptoelectronic devicesHigh-performance devicesNucleation layerGrapheneAlN/sapphireFlexible optoelectronic devicesThin filmsFilm formation processGaNFilm stressDislocation densitySurface roughnessFilmsFormation processEpitaxyGrowth conditionsBilayer
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