2025
Two-photon and three-photon excitation in GaN by spectrally broadband and few-cycle laser pulses
Wang M, Xiao J, Wang M, Yi J, Song Y, Zhang Y, Wang J, Cao B, Lienau C, Xu K. Two-photon and three-photon excitation in GaN by spectrally broadband and few-cycle laser pulses. Optics & Laser Technology 2025, 191: 113334. DOI: 10.1016/j.optlastec.2025.113334.Peer-Reviewed Original ResearchThree-photon excitationTwo-photonGaN near band edge emissionsFew-cycle laser pulsesFew-cycle pulsesSimultaneous two-photonSpatial intensity fluctuationsMultiple nonlinear processesFew-cycleLaser pulsesBroadband pulsesNear-band-edge emissionFrequency conversionIntensity fluctuationsElectronic signal processingUltrashort laserPetahertzNonlinear interactionsNonlinear signalsExcitationGaNNonlinear processesSurface morphologyFilm qualityPulseInfluence of Surface Treatments on the Ohmic Contact Performance on the N-Face of Iron-Doped Semi-Insulating Freestanding GaN
Sun Y, Zhang Y, Wang X, Zhou H, Xia S, Zhu Q, Liu W, Wang J, Xu K. Influence of Surface Treatments on the Ohmic Contact Performance on the N-Face of Iron-Doped Semi-Insulating Freestanding GaN. IEEE Transactions On Electron Devices 2025, 72: 1027-1034. DOI: 10.1109/ted.2025.3534739.Peer-Reviewed Original ResearchOhmic contact performanceOhmic contactsGaN-based devicesInfluence of surface treatmentContact performanceSurface treatmentBand bendingN-faceInductively coupled plasmaSpecific contact resistanceOptimized ohmic contactsInductively coupled plasma etchingImproved surface morphologySurface band bendingLow carrier concentrationGaOx layerElectrical performanceSemi-insulatingContact resistanceSurface statesWet etchingSurface roughnessCarrier concentrationSurface morphologyDry etching
2024
Nanoindentation mechanical studies of bulk AlN single crystals with different orientations
Zhou H, Chen K, Gao X, Zheng S, Zeng X, Wang C, Wang Y, Pan Y, Xu K. Nanoindentation mechanical studies of bulk AlN single crystals with different orientations. Semiconductor Science And Technology 2024, 40: 015008. DOI: 10.1088/1361-6641/ad98b8.Peer-Reviewed Original ResearchIndentation depthYoung's modulusPhysical vapor transportIncreasing indentation depthIndentation size effectNano-mechanical testingLuminescence quenchingSmall Young's modulusCrystal planesSingle crystalsCrystal substratesRaman spectroscopyMechanical propertiesPanchromatic CL imagesLocal stressAlN single crystalsSurface morphologyMechanism studyAluminum nitrideProperties of AlNSlip regionCrystalIndentationStructural defectsModulusImproved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition
Fan S, Ikeda M, Zhang B, Li Z, Su X, Liu Z, Xu K. Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition. Journal Of Alloys And Compounds 2024, 1007: 176406. DOI: 10.1016/j.jallcom.2024.176406.Peer-Reviewed Original ResearchMetalorganic chemical vapor depositionChemical vapor depositionSurface morphologyVapor depositionPressure metalorganic chemical vapor depositionSevere parasitic reactionsAtmospheric pressure metalorganic chemical vapor depositionAtmospheric-pressure metalorganic chemical vapor depositionIn-plane uniformityLow surface roughnessV-pit densityExcellent surface morphologyAtomic force microscopyGaN/AlInN interfacesParasitic reactionsSurface roughnessGrowth temperatureSecond-order reaction modelReduced roughnessFilm thicknessAlInN filmsForce microscopyRoughness valuesCrystalline qualityElectronic devices
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