A Review of the Evolution of Residual Stresses in Additive Manufacturing During Selective Laser Melting Technology
Bian P, Jammal A, Xu K, Ye F, Zhao N, Song Y. A Review of the Evolution of Residual Stresses in Additive Manufacturing During Selective Laser Melting Technology. Materials 2025, 18: 1707. PMID: 40333274, PMCID: PMC12028742, DOI: 10.3390/ma18081707.Peer-Reviewed Original ResearchResidual stressAdditive manufacturingEvolution of residual stressesSelective laser melting technologyAreas of compressive stressLaser melting technologyApplication of SLMPlane stressLaser meltingTensile stressCompressive stressMelting technologyParameter matchingThermal stressPlane directionComponent failuresDominant stressFormation mechanismTemperature gradientSurface layerSLMRoom temperatureDistribution regularityRegularities of distributionExcessive stressTemperature Dependence of Electrical Properties of Ammonothermal GaN
Shen L, Li T, Ren G, Xie K, Lu W, Zhou H, Xu K. Temperature Dependence of Electrical Properties of Ammonothermal GaN. Physica Status Solidi (a) – Applications And Materials Science 2025, 222 DOI: 10.1002/pssa.202400832.Peer-Reviewed Original ResearchPolar optical phonon scatteringOptical phonon scatteringIonized impurity scatteringImpurity scatteringPhonon scatteringImpurity concentrationScattering mechanismsTemperature dependenceScattering effectsExperimentally measured valuesScatteringAmmonothermal methodLow temperaturesTemperature rangeCalculated valuesRoom temperatureElectrical propertiesMeasured valuesTemperatureGaN.High temperatureImpuritiesGaN
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