2025
On the dependence of internal stress on dislocation inclination pattern in HVPE-GaN substrates
Zhou F, Li Z, Liu M, Qiu Y, Yin T, Xu Y, Zhang Y, Niu M, Cai D, Wang J, Xu K. On the dependence of internal stress on dislocation inclination pattern in HVPE-GaN substrates. Applied Physics Letters 2025, 126: 082101. DOI: 10.1063/5.0255742.Peer-Reviewed Original ResearchInternal stressX-ray topographyDislocation configurationsDislocation patternsHVPE GaN substratesInclination of threading dislocationsTwo-photon excited photoluminescenceCombined Raman spectroscopyDependence of internal stressesRaman spectroscopyX-rayExcited photoluminescenceHydride vapor phase epitaxyVapor phase epitaxyDistribution of internal stressesDislocationInternal stress distributionPerformance of GaN devicesClassical elasticity theoryEpitaxial growthPhase epitaxyGaN substratesGaN devicesStress distributionElasticity theory
2024
Nanoindentation mechanical studies of bulk AlN single crystals with different orientations
Zhou H, Chen K, Gao X, Zheng S, Zeng X, Wang C, Wang Y, Pan Y, Xu K. Nanoindentation mechanical studies of bulk AlN single crystals with different orientations. Semiconductor Science And Technology 2024, 40: 015008. DOI: 10.1088/1361-6641/ad98b8.Peer-Reviewed Original ResearchIndentation depthYoung's modulusPhysical vapor transportIncreasing indentation depthIndentation size effectNano-mechanical testingLuminescence quenchingSmall Young's modulusCrystal planesSingle crystalsCrystal substratesRaman spectroscopyMechanical propertiesPanchromatic CL imagesLocal stressAlN single crystalsSurface morphologyMechanism studyAluminum nitrideProperties of AlNSlip regionCrystalIndentationStructural defectsModulusDislocation evolution in anisotropic deformation of GaN under nanoindentation
Chen K, Xue M, Chen R, Dong X, Gao X, Wang J, Han S, Song W, Xu K. Dislocation evolution in anisotropic deformation of GaN under nanoindentation. Applied Physics Letters 2024, 125: 142101. DOI: 10.1063/5.0230366.Peer-Reviewed Original ResearchDislocation evolutionShear stressInduced subsurface damageEnergy storage systemSlip system activityDislocation loopsPeierls-Nabarro stressCritical shear stressAbrasive particlesDislocation nucleationDislocation dynamicsPop-inSubsurface damageMulti-functional devicesCompressive stressDevice performanceMolecular dynamicsTransmission electron microscopyWireless communicationDefect evaluationStorage systemSingle crystalsGaN single crystalsRaman spectroscopyGaN wafers
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