2025
Hotspot and nonequilibrium thermal transport in AlGaN/GaN FinFET: A coupled electron-phonon Monte Carlo simulation study
Hu B, Wang Z, Xu K, Tang D. Hotspot and nonequilibrium thermal transport in AlGaN/GaN FinFET: A coupled electron-phonon Monte Carlo simulation study. International Journal Of Heat And Mass Transfer 2025, 241: 126679. DOI: 10.1016/j.ijheatmasstransfer.2025.126679.Peer-Reviewed Original ResearchNonequilibrium thermal transportThermal transportAlGaN/GaN FinFETsPolar optical scatteringElectron-phonon scatteringThermal transport processesPrimary phonon modesFirst-principles calculationsSevere self-heating effectPhonon modesStrong nonequilibriumEmission processMonte Carlo simulationsEnergy dissipation processIntermediate stateDissipative processesOptical scatteringSelf-heating effectCarlo simulationsTransport processesDissipation timeScatteringPeak temperature riseCoupling effectComplex transport mechanismsElectron–phonon coupling and thermal transport properties of GaN/AlGaN heterojunction under strain regulation
Chen J, Shan Z, Hu B, Wang Z, Tang D, Xu K. Electron–phonon coupling and thermal transport properties of GaN/AlGaN heterojunction under strain regulation. Physical Chemistry Chemical Physics 2025, 27: 2495-2509. PMID: 39804036, DOI: 10.1039/d4cp03880k.Peer-Reviewed Original ResearchElectron-phonon couplingIn-plane stressesTensile strainThermal transportCompressive strainPhonon frequenciesTwo-dimensional electron gasElectron-phonon coupling phenomenaSemiconductor materialsInterface thermal transportApplication of semiconductor materialsStates of phononsLow-frequency phononsFirst-principles calculationsThermoelectric properties of semiconductor materialsThermal transport propertiesBallistic phonon transportInterference of strainNon-equilibrium stateProperties of semiconductor materialsMigration of electronsThermal transport mechanismsIn-plane strainElectron gasPhonon modes
2024
Nonequilibrium electron–phonon coupling across the interfaces between Al nanofilm and GaN
Chen J, Bao W, Wang Z, Xu K, Tang D. Nonequilibrium electron–phonon coupling across the interfaces between Al nanofilm and GaN. Physical Chemistry Chemical Physics 2024, 26: 8504-8514. PMID: 38411463, DOI: 10.1039/d3cp06054c.Peer-Reviewed Original ResearchTwo-temperature modelTime-domain thermoreflectanceHigh-energy electronsPhonon modesE-phCoupling strengthAl nanofilmGaN-based field effect transistorsNon-equilibrium transport propertiesE-ph couplingElectron-phonon couplingElectronic relaxation processesModes of phononsFemtosecond laser excitationFemtosecond laser pulsesTime-domain thermoreflectance techniqueTime-domain thermoreflectance methodField-effect transistorsLA modeLaser pulsesElectronic device designLaser excitationThickness dependencePhononsGaN substrates
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