Growth behavior and optical properties of V-pits in GaN grown by a Na flux method
Zhang T, Liu Z, Si Z, Peng X, Dong X, Li M, Tang N, Xu K. Growth behavior and optical properties of V-pits in GaN grown by a Na flux method. CrystEngComm 2025, 27: 3675-3681. DOI: 10.1039/d5ce00095e.Peer-Reviewed Original ResearchOptical properties of Mg-implanted GaN grown on free-standing substrates
Wu W, Pan Y, Gao X, Wang X, Wei S, Sun J, Zeng X, Zheng S, Xu K. Optical properties of Mg-implanted GaN grown on free-standing substrates. Journal Of Physics D 2025, 58: 135101. DOI: 10.1088/1361-6463/ada8bb.Peer-Reviewed Original ResearchGaN:MgGaN thin filmsLuminescence bandThin filmsMetal organic chemical vapor depositionGreen luminescence bandBlue luminescence bandM-plane substrateLow-temperature PL spectraAcceptor energy levelChemical vapor depositionGaN free-standing substrateMg-doped GaNMg-implanted GaNUltraviolet luminescence peakPL spectraC-plane substratesLuminescence peakOptical propertiesEnergy levelsVapor depositionIon implantationAcceptorMgGa acceptorPhotoluminescence
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