Electron–phonon coupling and thermal transport properties of GaN/AlGaN heterojunction under strain regulation
Chen J, Shan Z, Hu B, Wang Z, Tang D, Xu K. Electron–phonon coupling and thermal transport properties of GaN/AlGaN heterojunction under strain regulation. Physical Chemistry Chemical Physics 2025, 27: 2495-2509. PMID: 39804036, DOI: 10.1039/d4cp03880k.Peer-Reviewed Original ResearchElectron-phonon couplingIn-plane stressesTensile strainThermal transportCompressive strainPhonon frequenciesTwo-dimensional electron gasElectron-phonon coupling phenomenaSemiconductor materialsInterface thermal transportApplication of semiconductor materialsStates of phononsLow-frequency phononsFirst-principles calculationsThermoelectric properties of semiconductor materialsThermal transport propertiesBallistic phonon transportInterference of strainNon-equilibrium stateProperties of semiconductor materialsMigration of electronsThermal transport mechanismsIn-plane strainElectron gasPhonon modes
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