2025
Luminescence properties of homoepitaxial Mg-doped GaN under different doping concentrations and annealing atmospheres
Wu W, Shu Z, Wang X, Wang Y, Pan Y, Sun J, Gao X, Zheng S, Wang M, Zeng X, Xu K. Luminescence properties of homoepitaxial Mg-doped GaN under different doping concentrations and annealing atmospheres. Journal Of Luminescence 2025, 284: 121294. DOI: 10.1016/j.jlumin.2025.121294.Peer-Reviewed Original ResearchLuminescence propertiesDoping concentrationP-type GaN thin filmMg-doped GaNGaN thin filmsMg dopingRoom temperature PLAcceptor energy levelCm-3Defect statesEnergy levelsMgGa acceptorN2 annealingO2 annealingCL spectraMg doping concentrationAnnealing atmosphereFS substrateThin filmsLuminescenceDopingGaN.Low temperaturesAnnealingAcceptorUnintentional Fe incorporation in the homo-epitaxy of GaN on Fe-doped freestanding GaN substrate
Xia S, Zhang Y, Sun Y, Zhu Q, Liu W, Yi J, Xue J, Wang J, Xu K. Unintentional Fe incorporation in the homo-epitaxy of GaN on Fe-doped freestanding GaN substrate. Applied Physics Express 2025, 18: 031001. DOI: 10.35848/1882-0786/adbc44.Peer-Reviewed Original ResearchGaN substratesThermal decompositionHigh-electron-mobility transistor devicesHomo-epitaxyFe incorporationFe dopingVapor phase decompositionSecondary ion mass spectroscopy measurementsFe-doped GaN substrateMeasurement resultsMolecular beam epitaxial growthTransistor devicesFe-dopingMass spectroscopy measurementsPhase decompositionHeating processSpectroscopy measurementsEpitaxial growthGaN epilayersGa-faceMemory effectGaNLow temperaturesIncorporation mechanismDopingTemperature Dependence of Electrical Properties of Ammonothermal GaN
Shen L, Li T, Ren G, Xie K, Lu W, Zhou H, Xu K. Temperature Dependence of Electrical Properties of Ammonothermal GaN. Physica Status Solidi (a) – Applications And Materials Science 2025, 222 DOI: 10.1002/pssa.202400832.Peer-Reviewed Original ResearchPolar optical phonon scatteringOptical phonon scatteringIonized impurity scatteringImpurity scatteringPhonon scatteringImpurity concentrationScattering mechanismsTemperature dependenceScattering effectsExperimentally measured valuesScatteringAmmonothermal methodLow temperaturesTemperature rangeCalculated valuesRoom temperatureElectrical propertiesMeasured valuesTemperatureGaN.High temperatureImpuritiesGaN
2023
Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology
Shi H, Yi A, Ding J, Liu X, Qin Q, Yi J, Hu J, Wang M, Cai D, Wang J, Xu K, Mu F, Suga T, Heller R, Wang M, Zhou S, Xu W, Huang K, You T, Ou X. Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology. Science China Information Sciences 2023, 66: 219403. DOI: 10.1007/s11432-022-3668-0.Peer-Reviewed Original Research
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