2025
Optical properties of Mg-implanted GaN grown on free-standing substrates
Wu W, Pan Y, Gao X, Wang X, Wei S, Sun J, Zeng X, Zheng S, Xu K. Optical properties of Mg-implanted GaN grown on free-standing substrates. Journal Of Physics D 2025, 58: 135101. DOI: 10.1088/1361-6463/ada8bb.Peer-Reviewed Original ResearchGaN:MgGaN thin filmsLuminescence bandThin filmsMetal organic chemical vapor depositionGreen luminescence bandBlue luminescence bandM-plane substrateLow-temperature PL spectraAcceptor energy levelChemical vapor depositionGaN free-standing substrateMg-doped GaNMg-implanted GaNUltraviolet luminescence peakPL spectraC-plane substratesLuminescence peakOptical propertiesEnergy levelsVapor depositionIon implantationAcceptorMgGa acceptorPhotoluminescence
2023
Structure and Cathodoluminescence Properties in Tb3+ and Eu3+ Doped AlN Films
Luo X, Wang X, Meng H, Chen H, Zeng X, Gao X, Mao H, Xu K. Structure and Cathodoluminescence Properties in Tb3+ and Eu3+ Doped AlN Films. Physica Status Solidi (a) – Applications And Materials Science 2023, 221 DOI: 10.1002/pssa.202300625.Peer-Reviewed Original ResearchAlN filmsTb 3Non-radiative resonant energy transferEu 3Cathodoluminescence propertiesX-ray diffractionResonant energy transferEnergy transfer mechanismInternal compressive stressIon implantationChromaticity coordinatesRaman scatteringColor temperatureEnergy transferFilmsTransfer mechanismScatteringCrystal structureTb3Dose ratioFirst timeCompressive stressDiffractionAlN hostProperties
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