2025
Luminescence properties of homoepitaxial Mg-doped GaN under different doping concentrations and annealing atmospheres
Wu W, Shu Z, Wang X, Wang Y, Pan Y, Sun J, Gao X, Zheng S, Wang M, Zeng X, Xu K. Luminescence properties of homoepitaxial Mg-doped GaN under different doping concentrations and annealing atmospheres. Journal Of Luminescence 2025, 284: 121294. DOI: 10.1016/j.jlumin.2025.121294.Peer-Reviewed Original ResearchLuminescence propertiesDoping concentrationP-type GaN thin filmMg-doped GaNGaN thin filmsMg dopingRoom temperature PLAcceptor energy levelCm-3Defect statesEnergy levelsMgGa acceptorN2 annealingO2 annealingCL spectraMg doping concentrationAnnealing atmosphereFS substrateThin filmsLuminescenceDopingGaN.Low temperaturesAnnealingAcceptorGrowth behavior and optical properties of V-pits in GaN grown by a Na flux method
Zhang T, Liu Z, Si Z, Peng X, Dong X, Li M, Tang N, Xu K. Growth behavior and optical properties of V-pits in GaN grown by a Na flux method. CrystEngComm 2025, 27: 3675-3681. DOI: 10.1039/d5ce00095e.Peer-Reviewed Original ResearchTemperature Dependence of Electrical Properties of Ammonothermal GaN
Shen L, Li T, Ren G, Xie K, Lu W, Zhou H, Xu K. Temperature Dependence of Electrical Properties of Ammonothermal GaN. Physica Status Solidi (a) – Applications And Materials Science 2025, 222 DOI: 10.1002/pssa.202400832.Peer-Reviewed Original ResearchPolar optical phonon scatteringOptical phonon scatteringIonized impurity scatteringImpurity scatteringPhonon scatteringImpurity concentrationScattering mechanismsTemperature dependenceScattering effectsExperimentally measured valuesScatteringAmmonothermal methodLow temperaturesTemperature rangeCalculated valuesRoom temperatureElectrical propertiesMeasured valuesTemperatureGaN.High temperatureImpuritiesGaN
2024
Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask
Tao J, Xu Y, Li J, Cai X, Wang Y, Wang G, Cao B, Xu K. Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask. Japanese Journal Of Applied Physics 2024, 63: 025503. DOI: 10.35848/1347-4065/ad1e88.Peer-Reviewed Original ResearchGraphene maskEpitaxial lateral overgrowth-GaNEpitaxial lateral overgrowthTwo-dimensional materialsGrowth of GaNHigh-quality GaNHexagonal grapheneELOG GaNGaN growth processGraphene surfaceThreading dislocation densityLattice mismatchGrapheneGaNLateral overgrowthPL spectraHeterogeneous substratesDislocation densityRelaxationGaN.Growth processStress relaxationSpectraNitrideGPa
This site is protected by hCaptcha and its Privacy Policy and Terms of Service apply