2025
Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD
Wang X, Zhang Y, Wang M, Wang J, Xu K. Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD. Vacuum 2025, 235: 114135. DOI: 10.1016/j.vacuum.2025.114135.Peer-Reviewed Original ResearchMetal organic chemical vapor depositionHigh-electron-mobility transistorsEpitaxial layersTwo-dimensional electron gasAlGaN/GaN high-electron-mobility transistorsEpitaxial growthLow-temperature mobilityGaN channel layerSemi-insulating GaNFree-standing GaN substratesGaN buffer layerRadio frequencyFe impurity concentrationsElectron gasChemical vapor depositionImpurity concentrationHEMT structuresEpitaxial structureDislocation densityN-GaNLow-temperature growthGaN substratesStopper layerChannel layerSurface roughnessUnintentional Fe incorporation in the homo-epitaxy of GaN on Fe-doped freestanding GaN substrate
Xia S, Zhang Y, Sun Y, Zhu Q, Liu W, Yi J, Xue J, Wang J, Xu K. Unintentional Fe incorporation in the homo-epitaxy of GaN on Fe-doped freestanding GaN substrate. Applied Physics Express 2025, 18: 031001. DOI: 10.35848/1882-0786/adbc44.Peer-Reviewed Original ResearchGaN substratesThermal decompositionHigh-electron-mobility transistor devicesHomo-epitaxyFe incorporationFe dopingVapor phase decompositionSecondary ion mass spectroscopy measurementsFe-doped GaN substrateMeasurement resultsMolecular beam epitaxial growthTransistor devicesFe-dopingMass spectroscopy measurementsPhase decompositionHeating processSpectroscopy measurementsEpitaxial growthGaN epilayersGa-faceMemory effectGaNLow temperaturesIncorporation mechanismDopingOn the dependence of internal stress on dislocation inclination pattern in HVPE-GaN substrates
Zhou F, Li Z, Liu M, Qiu Y, Yin T, Xu Y, Zhang Y, Niu M, Cai D, Wang J, Xu K. On the dependence of internal stress on dislocation inclination pattern in HVPE-GaN substrates. Applied Physics Letters 2025, 126: 082101. DOI: 10.1063/5.0255742.Peer-Reviewed Original ResearchInternal stressX-ray topographyDislocation configurationsDislocation patternsHVPE GaN substratesInclination of threading dislocationsTwo-photon excited photoluminescenceCombined Raman spectroscopyDependence of internal stressesRaman spectroscopyX-rayExcited photoluminescenceHydride vapor phase epitaxyVapor phase epitaxyDistribution of internal stressesDislocationInternal stress distributionPerformance of GaN devicesClassical elasticity theoryEpitaxial growthPhase epitaxyGaN substratesGaN devicesStress distributionElasticity theory
2024
Demonstration of InGaN Micro-Light-Emitting Diodes with Long Wavelength Emission Based on GaN Substrate
Xu W, Wang G, Huang J, Wang Q, Zhang L, Li K, Xu K. Demonstration of InGaN Micro-Light-Emitting Diodes with Long Wavelength Emission Based on GaN Substrate. 2024, 00: 41-44. DOI: 10.1109/sslchinaifws64644.2024.10835382.Peer-Reviewed Original ResearchLeakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates
Jin W, Zhang Y, Xia S, Zhu Q, Sun Y, Yi J, Wang J, Xu K. Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates. AIP Advances 2024, 14: 095118. DOI: 10.1063/5.0208706.Peer-Reviewed Original ResearchSchottky barrier diodesGaN Schottky barrier diodesVertical GaN-on-GaN Schottky barrier diodesPoole–Frenkel emissionNative GaN substratesVertical GaN Schottky barrier diodesGaN substratesBarrier diodesDefect etchingLeakage currentOptimal fabrication processLeakage mechanismFabricated deviceForeign substratesFabrication processEmissionPassive techniquesGrowth and characterization of micro-LED based on GaN substrate.
Wang G, Huang J, Wang Y, Tao T, Zhu X, Wang Z, Li K, Wang Y, Su X, Wang J, Liu B, Cao B, Xu K. Growth and characterization of micro-LED based on GaN substrate. Optics Express 2024, 32: 31463-31472. PMID: 39573280, DOI: 10.1364/oe.529771.Peer-Reviewed Original ResearchExternal quantum efficiencyMicro-LED chipResidual stressDislocation densityMicro-LEDsGaN-based micro-LEDReduced dislocation densityCarrier injectionQuantum efficiencyDislocation phenomenaHigher uniformitySuperior uniformityMicro-LED technologyGaN substratesPit distributionDominant mechanismChipDislocationHigh brightnessUniformityUltra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays
Liu Y, Wang G, Feng F, Zhanghu M, Yuan Z, Li Z, Xu K, Kwok H, Liu Z. Ultra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays. PhotoniX 2024, 5: 23. DOI: 10.1186/s43074-024-00137-4.Peer-Reviewed Original ResearchGaN-on-GaNOptoelectronic propertiesEfficiency droop ratioEmission wavelengthMicro-LEDsGaN-on-sapphireCrystal qualityMicro-displaysCm-2High luminanceMicro-display applicationsMicro-LED devicesGaN substratesSapphire substratesDroop ratioEfficiency droopSeries resistanceGallium nitrideEnhanced efficiencyStrong ambient lightNonequilibrium electron–phonon coupling across the interfaces between Al nanofilm and GaN
Chen J, Bao W, Wang Z, Xu K, Tang D. Nonequilibrium electron–phonon coupling across the interfaces between Al nanofilm and GaN. Physical Chemistry Chemical Physics 2024, 26: 8504-8514. PMID: 38411463, DOI: 10.1039/d3cp06054c.Peer-Reviewed Original ResearchTwo-temperature modelTime-domain thermoreflectanceHigh-energy electronsPhonon modesE-phCoupling strengthAl nanofilmGaN-based field effect transistorsNon-equilibrium transport propertiesE-ph couplingElectron-phonon couplingElectronic relaxation processesModes of phononsFemtosecond laser excitationFemtosecond laser pulsesTime-domain thermoreflectance techniqueTime-domain thermoreflectance methodField-effect transistorsLA modeLaser pulsesElectronic device designLaser excitationThickness dependencePhononsGaN substrates
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