Unintentional Fe incorporation in the homo-epitaxy of GaN on Fe-doped freestanding GaN substrate
Xia S, Zhang Y, Sun Y, Zhu Q, Liu W, Yi J, Xue J, Wang J, Xu K. Unintentional Fe incorporation in the homo-epitaxy of GaN on Fe-doped freestanding GaN substrate. Applied Physics Express 2025, 18: 031001. DOI: 10.35848/1882-0786/adbc44.Peer-Reviewed Original ResearchGaN substratesThermal decompositionHigh-electron-mobility transistor devicesHomo-epitaxyFe incorporationFe dopingVapor phase decompositionSecondary ion mass spectroscopy measurementsFe-doped GaN substrateMeasurement resultsMolecular beam epitaxial growthTransistor devicesFe-dopingMass spectroscopy measurementsPhase decompositionHeating processSpectroscopy measurementsEpitaxial growthGaN epilayersGa-faceMemory effectGaNLow temperaturesIncorporation mechanismDopingEffect of AlN interlayer thickness on thermal conductances of GaN epilayer and GaN/SiC interface in GaN-on-SiC heterostructures
Wang L, Zhang Z, Su X, Zhou J, Chen J, Li Z, Chang G, Xia S, Yin T, Niu M, Zhu J, Tang D, Xu K. Effect of AlN interlayer thickness on thermal conductances of GaN epilayer and GaN/SiC interface in GaN-on-SiC heterostructures. Applied Surface Science 2025, 686: 162106. DOI: 10.1016/j.apsusc.2024.162106.Peer-Reviewed Original ResearchHigh electron mobility transistorsAlN interlayer thicknessGaN-on-SiCGaN epilayersAlN interlayerPhonon density of statesHeteroepitaxial growth of GaNDensity of statesAtomically smooth interfaceThermal conductivityElectron mobility transistorsTime-domain thermoreflectanceMultilayer structureEnhancement of G′Growth of GaNInterfacial thermal conductanceInterlayer thicknessMetal organic chemical vapor depositionSiC substrateMobility transistorsAlN bufferGrow GaNChemical vapor depositionIsland shapeGaN
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