2025
Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD
Wang X, Zhang Y, Wang M, Wang J, Xu K. Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD. Vacuum 2025, 235: 114135. DOI: 10.1016/j.vacuum.2025.114135.Peer-Reviewed Original ResearchMetal organic chemical vapor depositionHigh-electron-mobility transistorsEpitaxial layersTwo-dimensional electron gasAlGaN/GaN high-electron-mobility transistorsEpitaxial growthLow-temperature mobilityGaN channel layerSemi-insulating GaNFree-standing GaN substratesGaN buffer layerRadio frequencyFe impurity concentrationsElectron gasChemical vapor depositionImpurity concentrationHEMT structuresEpitaxial structureDislocation densityN-GaNLow-temperature growthGaN substratesStopper layerChannel layerSurface roughness
2023
Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall
Liu X, Li B, Wu J, Li J, Yue W, Zhu R, Wang Q, Li X, Ben J, He W, Chiu H, Xu K, Zhong Z. Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall. IEEE Journal Of The Electron Devices Society 2023, 12: 34-38. DOI: 10.1109/jeds.2023.3340512.Peer-Reviewed Original ResearchJunction Barrier SchottkyPower device figureState resistance RonHigh voltage applicationsFree-standing GaN substratesElectric field distributionSlanted sidewallsBreakdown voltage VBREdges of devicesVertical GaNJBS diodesVoltage applicationsDevice figureResistance RonHigh voltageGaN substrateField distributionSidewallsGW/cm2SchottkyGreat potentialDevicesVoltageRONDiodes
This site is protected by hCaptcha and its Privacy Policy and Terms of Service apply