2025
Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD
Wang X, Zhang Y, Wang M, Wang J, Xu K. Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD. Vacuum 2025, 235: 114135. DOI: 10.1016/j.vacuum.2025.114135.Peer-Reviewed Original ResearchMetal organic chemical vapor depositionHigh-electron-mobility transistorsEpitaxial layersTwo-dimensional electron gasAlGaN/GaN high-electron-mobility transistorsEpitaxial growthLow-temperature mobilityGaN channel layerSemi-insulating GaNFree-standing GaN substratesGaN buffer layerRadio frequencyFe impurity concentrationsElectron gasChemical vapor depositionImpurity concentrationHEMT structuresEpitaxial structureDislocation densityN-GaNLow-temperature growthGaN substratesStopper layerChannel layerSurface roughness
2024
60‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure
Liu Y, Wang G, Feng F, Li Z, Liu Z, Xu K, Kwok H, Liu Z. 60‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure. SID Symposium Digest Of Technical Papers 2024, 55: 828-831. DOI: 10.1002/sdtp.17658.Peer-Reviewed Original ResearchP‐11.6: Minimal efficiency degradation and elevated radiometric power density of Ultraviolet‐A micro‐LED with homoepitaxial structure
Liu Y, Wang G, Feng F, Li Z, Liu Z, Xu K, Kwok H, Liu Z. P‐11.6: Minimal efficiency degradation and elevated radiometric power density of Ultraviolet‐A micro‐LED with homoepitaxial structure. SID Symposium Digest Of Technical Papers 2024, 55: 1305-1308. DOI: 10.1002/sdtp.17348.Peer-Reviewed Original ResearchMicro-LEDsLow ideality factorHeat dissipation propertiesHigher power outputIdeality factorPower densityDissipative propertiesGallium nitrideOptoelectronic characteristicsVisible light spectrumPower outputEpitaxial structureCrystal structureMaskless photolithographyOptical stabilityEfficient degradationCentral wavelength
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