2025
Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD
Wang X, Zhang Y, Wang M, Wang J, Xu K. Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD. Vacuum 2025, 235: 114135. DOI: 10.1016/j.vacuum.2025.114135.Peer-Reviewed Original ResearchMetal organic chemical vapor depositionHigh-electron-mobility transistorsEpitaxial layersTwo-dimensional electron gasAlGaN/GaN high-electron-mobility transistorsEpitaxial growthLow-temperature mobilityGaN channel layerSemi-insulating GaNFree-standing GaN substratesGaN buffer layerRadio frequencyFe impurity concentrationsElectron gasChemical vapor depositionImpurity concentrationHEMT structuresEpitaxial structureDislocation densityN-GaNLow-temperature growthGaN substratesStopper layerChannel layerSurface roughnessUnintentional Fe incorporation in the homo-epitaxy of GaN on Fe-doped freestanding GaN substrate
Xia S, Zhang Y, Sun Y, Zhu Q, Liu W, Yi J, Xue J, Wang J, Xu K. Unintentional Fe incorporation in the homo-epitaxy of GaN on Fe-doped freestanding GaN substrate. Applied Physics Express 2025, 18: 031001. DOI: 10.35848/1882-0786/adbc44.Peer-Reviewed Original ResearchGaN substratesThermal decompositionHigh-electron-mobility transistor devicesHomo-epitaxyFe incorporationFe dopingVapor phase decompositionSecondary ion mass spectroscopy measurementsFe-doped GaN substrateMeasurement resultsMolecular beam epitaxial growthTransistor devicesFe-dopingMass spectroscopy measurementsPhase decompositionHeating processSpectroscopy measurementsEpitaxial growthGaN epilayersGa-faceMemory effectGaNLow temperaturesIncorporation mechanismDopingOn the dependence of internal stress on dislocation inclination pattern in HVPE-GaN substrates
Zhou F, Li Z, Liu M, Qiu Y, Yin T, Xu Y, Zhang Y, Niu M, Cai D, Wang J, Xu K. On the dependence of internal stress on dislocation inclination pattern in HVPE-GaN substrates. Applied Physics Letters 2025, 126: 082101. DOI: 10.1063/5.0255742.Peer-Reviewed Original ResearchInternal stressX-ray topographyDislocation configurationsDislocation patternsHVPE GaN substratesInclination of threading dislocationsTwo-photon excited photoluminescenceCombined Raman spectroscopyDependence of internal stressesRaman spectroscopyX-rayExcited photoluminescenceHydride vapor phase epitaxyVapor phase epitaxyDistribution of internal stressesDislocationInternal stress distributionPerformance of GaN devicesClassical elasticity theoryEpitaxial growthPhase epitaxyGaN substratesGaN devicesStress distributionElasticity theory
2023
Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition
Wang S, Xu J, Wang Y, Su X, Zheng Y, Bao N, Xu K. Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition. Crystal Growth & Design 2023, 24: 331-338. DOI: 10.1021/acs.cgd.3c01042.Peer-Reviewed Original ResearchMetal-organic chemical vapor depositionGaN filmsChemical vapor depositionSurface acoustic wave devicesVapor depositionSingle crystalline GaN filmsAcoustic wave devicesLGS substrateHigh frequency rangeSAW devicesPiezoelectric propertiesWave devicesGood optical propertiesFilm qualityCompressive stressGaN materialEpitaxial growthGa dropletsMetal nitridesEpitaxial relationshipFilmsGas elementsHigh temperatureLGS crystalMixed dislocationsEpitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene
Zhou J, Xu Y, Wang X, Wang Y, Yue L, Wang J, Cao B, Xu K. Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene. 2023, 00: 161-164. DOI: 10.1109/sslchinaifws60785.2023.10399753.Peer-Reviewed Original ResearchGaN filmsAlN/sapphire templatesEpitaxial GaN thin filmsGrowth of GaN filmsGrowth of high-quality GaN filmsGaN thin filmsHigh-quality GaN filmsEpitaxial growthOptoelectronic devicesHigh-performance devicesNucleation layerGrapheneAlN/sapphireFlexible optoelectronic devicesThin filmsFilm formation processGaNFilm stressDislocation densitySurface roughnessFilmsFormation processEpitaxyGrowth conditionsBilayer
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