2025
On the dependence of internal stress on dislocation inclination pattern in HVPE-GaN substrates
Zhou F, Li Z, Liu M, Qiu Y, Yin T, Xu Y, Zhang Y, Niu M, Cai D, Wang J, Xu K. On the dependence of internal stress on dislocation inclination pattern in HVPE-GaN substrates. Applied Physics Letters 2025, 126: 082101. DOI: 10.1063/5.0255742.Peer-Reviewed Original ResearchInternal stressX-ray topographyDislocation configurationsDislocation patternsHVPE GaN substratesInclination of threading dislocationsTwo-photon excited photoluminescenceCombined Raman spectroscopyDependence of internal stressesRaman spectroscopyX-rayExcited photoluminescenceHydride vapor phase epitaxyVapor phase epitaxyDistribution of internal stressesDislocationInternal stress distributionPerformance of GaN devicesClassical elasticity theoryEpitaxial growthPhase epitaxyGaN substratesGaN devicesStress distributionElasticity theory
2024
Growth and characterization of micro-LED based on GaN substrate.
Wang G, Huang J, Wang Y, Tao T, Zhu X, Wang Z, Li K, Wang Y, Su X, Wang J, Liu B, Cao B, Xu K. Growth and characterization of micro-LED based on GaN substrate. Optics Express 2024, 32: 31463-31472. PMID: 39573280, DOI: 10.1364/oe.529771.Peer-Reviewed Original ResearchExternal quantum efficiencyMicro-LED chipResidual stressDislocation densityMicro-LEDsGaN-based micro-LEDReduced dislocation densityCarrier injectionQuantum efficiencyDislocation phenomenaHigher uniformitySuperior uniformityMicro-LED technologyGaN substratesPit distributionDominant mechanismChipDislocationHigh brightnessUniformityNano-indentation study of dislocation evolution in GaN-based laser diodes
Chen J, Su X, Wang G, Niu M, Li X, Xu K. Nano-indentation study of dislocation evolution in GaN-based laser diodes. Discover Nano 2024, 19: 40. PMID: 38453741, PMCID: PMC10920521, DOI: 10.1186/s11671-024-03983-0.Peer-Reviewed Original ResearchSlip systemsBasal slip systemNano-indentation studiesBehavior of dislocationsNano-indentation techniquePyramidal slip planesDensity of dislocationsP-GaN layerDislocation evolutionGaN-based laser diodesMismatch stressBurgers vectorGaN-based LDSlip planesLaser diodeMulti-LayerMotion behaviorStrained layersDislocationLayerDislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation
Chen J, Chen K, Su X, Niu M, Wang Q, Xu K. Dislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation. Thin Solid Films 2024, 791: 140240. DOI: 10.1016/j.tsf.2024.140240.Peer-Reviewed Original Research
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