2025
Microstructure and thermal conductance of the AlN-on-sapphire heterostructure prepared by metal-organic chemical vapor deposition
Wang L, Zhou J, Su X, Chen J, Li Z, Zhu J, Zhang Z, Chang G, Xia S, Yin T, Niu M, Tang D, Xu K. Microstructure and thermal conductance of the AlN-on-sapphire heterostructure prepared by metal-organic chemical vapor deposition. Vacuum 2025, 238: 114335. DOI: 10.1016/j.vacuum.2025.114335.Peer-Reviewed Original ResearchAlN-on-sapphireThickness of AlN filmMetal organic chemical vapor depositionAlN filmsChemical vapor depositionAlN/sapphire interfaceThermal conductivityVapor depositionIncrease of tensile stressTime-domain thermoreflectance techniqueAlN film thicknessAlGaN-based ultraviolet light-emitting diodesAlGaN-based UV LEDsChemically bonded interfaceInterfacial thermal conductanceHeat transfer abilityHeat transfer mechanismPhonon densityUltraviolet light-emitting diodesUV LEDsMicrostructure of AlNAlN thicknessAlN/sapphireLarger lattice mismatchLattice mismatchResearch on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD
Wang X, Zhang Y, Wang M, Wang J, Xu K. Research on the epitaxial growth of Power/RF HEMT structures on n-GaN and Fe-doped SI-GaN Free-Standing Substrates by MOCVD. Vacuum 2025, 235: 114135. DOI: 10.1016/j.vacuum.2025.114135.Peer-Reviewed Original ResearchMetal organic chemical vapor depositionHigh-electron-mobility transistorsEpitaxial layersTwo-dimensional electron gasAlGaN/GaN high-electron-mobility transistorsEpitaxial growthLow-temperature mobilityGaN channel layerSemi-insulating GaNFree-standing GaN substratesGaN buffer layerRadio frequencyFe impurity concentrationsElectron gasChemical vapor depositionImpurity concentrationHEMT structuresEpitaxial structureDislocation densityN-GaNLow-temperature growthGaN substratesStopper layerChannel layerSurface roughnessEffect of AlN interlayer thickness on thermal conductances of GaN epilayer and GaN/SiC interface in GaN-on-SiC heterostructures
Wang L, Zhang Z, Su X, Zhou J, Chen J, Li Z, Chang G, Xia S, Yin T, Niu M, Zhu J, Tang D, Xu K. Effect of AlN interlayer thickness on thermal conductances of GaN epilayer and GaN/SiC interface in GaN-on-SiC heterostructures. Applied Surface Science 2025, 686: 162106. DOI: 10.1016/j.apsusc.2024.162106.Peer-Reviewed Original ResearchHigh electron mobility transistorsAlN interlayer thicknessGaN-on-SiCGaN epilayersAlN interlayerPhonon density of statesHeteroepitaxial growth of GaNDensity of statesAtomically smooth interfaceThermal conductivityElectron mobility transistorsTime-domain thermoreflectanceMultilayer structureEnhancement of G′Growth of GaNInterfacial thermal conductanceInterlayer thicknessMetal organic chemical vapor depositionSiC substrateMobility transistorsAlN bufferGrow GaNChemical vapor depositionIsland shapeGaNOptical properties of Mg-implanted GaN grown on free-standing substrates
Wu W, Pan Y, Gao X, Wang X, Wei S, Sun J, Zeng X, Zheng S, Xu K. Optical properties of Mg-implanted GaN grown on free-standing substrates. Journal Of Physics D 2025, 58: 135101. DOI: 10.1088/1361-6463/ada8bb.Peer-Reviewed Original ResearchGaN:MgGaN thin filmsLuminescence bandThin filmsMetal organic chemical vapor depositionGreen luminescence bandBlue luminescence bandM-plane substrateLow-temperature PL spectraAcceptor energy levelChemical vapor depositionGaN free-standing substrateMg-doped GaNMg-implanted GaNUltraviolet luminescence peakPL spectraC-plane substratesLuminescence peakOptical propertiesEnergy levelsVapor depositionIon implantationAcceptorMgGa acceptorPhotoluminescence
2024
Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition
Fan S, Ikeda M, Zhang B, Li Z, Su X, Liu Z, Xu K. Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition. Journal Of Alloys And Compounds 2024, 1007: 176406. DOI: 10.1016/j.jallcom.2024.176406.Peer-Reviewed Original ResearchMetalorganic chemical vapor depositionChemical vapor depositionSurface morphologyVapor depositionPressure metalorganic chemical vapor depositionSevere parasitic reactionsAtmospheric pressure metalorganic chemical vapor depositionAtmospheric-pressure metalorganic chemical vapor depositionIn-plane uniformityLow surface roughnessV-pit densityExcellent surface morphologyAtomic force microscopyGaN/AlInN interfacesParasitic reactionsSurface roughnessGrowth temperatureSecond-order reaction modelReduced roughnessFilm thicknessAlInN filmsForce microscopyRoughness valuesCrystalline qualityElectronic devices
2023
Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition
Wang S, Xu J, Wang Y, Su X, Zheng Y, Bao N, Xu K. Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition. Crystal Growth & Design 2023, 24: 331-338. DOI: 10.1021/acs.cgd.3c01042.Peer-Reviewed Original ResearchMetal-organic chemical vapor depositionGaN filmsChemical vapor depositionSurface acoustic wave devicesVapor depositionSingle crystalline GaN filmsAcoustic wave devicesLGS substrateHigh frequency rangeSAW devicesPiezoelectric propertiesWave devicesGood optical propertiesFilm qualityCompressive stressGaN materialEpitaxial growthGa dropletsMetal nitridesEpitaxial relationshipFilmsGas elementsHigh temperatureLGS crystalMixed dislocations
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