Luminescence properties of homoepitaxial Mg-doped GaN under different doping concentrations and annealing atmospheres
Wu W, Shu Z, Wang X, Wang Y, Pan Y, Sun J, Gao X, Zheng S, Wang M, Zeng X, Xu K. Luminescence properties of homoepitaxial Mg-doped GaN under different doping concentrations and annealing atmospheres. Journal Of Luminescence 2025, 284: 121294. DOI: 10.1016/j.jlumin.2025.121294.Peer-Reviewed Original ResearchLuminescence propertiesDoping concentrationP-type GaN thin filmMg-doped GaNGaN thin filmsMg dopingRoom temperature PLAcceptor energy levelCm-3Defect statesEnergy levelsMgGa acceptorN2 annealingO2 annealingCL spectraMg doping concentrationAnnealing atmosphereFS substrateThin filmsLuminescenceDopingGaN.Low temperaturesAnnealingAcceptorOptical properties of Mg-implanted GaN grown on free-standing substrates
Wu W, Pan Y, Gao X, Wang X, Wei S, Sun J, Zeng X, Zheng S, Xu K. Optical properties of Mg-implanted GaN grown on free-standing substrates. Journal Of Physics D 2025, 58: 135101. DOI: 10.1088/1361-6463/ada8bb.Peer-Reviewed Original ResearchGaN:MgGaN thin filmsLuminescence bandThin filmsMetal organic chemical vapor depositionGreen luminescence bandBlue luminescence bandM-plane substrateLow-temperature PL spectraAcceptor energy levelChemical vapor depositionGaN free-standing substrateMg-doped GaNMg-implanted GaNUltraviolet luminescence peakPL spectraC-plane substratesLuminescence peakOptical propertiesEnergy levelsVapor depositionIon implantationAcceptorMgGa acceptorPhotoluminescence
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