2024
Artificial Intelligence Applications in Oral Cancer and Oral Dysplasia
Viet C, Zhang M, Dharmaraj N, Li G, Pearson A, Manon V, Grandhi A, Xu K, Aouizerat B, Young S. Artificial Intelligence Applications in Oral Cancer and Oral Dysplasia. Tissue Engineering Part A 2024 PMID: 39041628, DOI: 10.1089/ten.tea.2024.0096.Peer-Reviewed Original ResearchOral squamous cell carcinomaOral epithelial dysplasiaPredictive biomarkersMalignant transformation of oral epithelial dysplasiaOral squamous cell carcinoma outcomesOSCC behaviorTransformation to oral squamous cell carcinomaClinical challengeOral epithelial dysplasia patientsOSCC survivalPrecursors of oral squamous cell carcinomaTumor immune microenvironmentSquamous cell carcinomaImmune cell patternsEpithelial dysplasiaOral dysplasiaImmune microenvironmentCell carcinomaImproved survivalMultiplex immunohistochemistryOral cancerOSCC patientsTreatment responsePoor outcomeDisfiguring treatmentFrequent Cocaine Use is Associated with Larger HIV Latent Reservoir Size
Aouizerat B, Garcia J, Domingues C, Xu K, Quach B, Page G, Konkle-Parker D, Bolivar H, Lahiri C, Golub E, Cohen M, Kassaye S, DeHovitz J, Kuniholm M, Archin N, Tien P, Hancock D, Johnson E. Frequent Cocaine Use is Associated with Larger HIV Latent Reservoir Size. JAIDS Journal Of Acquired Immune Deficiency Syndromes 2024 DOI: 10.1097/qai.0000000000003472.Peer-Reviewed Original ResearchHIV latent reservoirImpact of cocaine useCocaine useT cellsAssociated with higher HIV viral loadHigher HIV viral loadSelf-reported cocaine useHIV DNA assaysLatent reservoir sizeRapid HIV progressionVirologically suppressed womenHIV viral loadFrequent cocaine useVirally suppressed PLWHHistory of HIVLatent reservoirAntiretroviral therapyHIV progressionLongitudinal cohort studyViral loadCocaine usersNever usersIntact provirusesCohort studyCD4Childhood adversity, accelerated GrimAge, and associated health consequences
Harvanek Z, Kudinova A, Wong S, Xu K, Brick L, Daniels T, Marsit C, Burt A, Sinha R, Tyrka A. Childhood adversity, accelerated GrimAge, and associated health consequences. Journal Of Behavioral Medicine 2024, 1-14. PMID: 38762606, DOI: 10.1007/s10865-024-00496-0.Peer-Reviewed Original ResearchBody mass indexChildhood Trauma QuestionnaireGrimAge accelerationEarly life stressChildhood adversityAssociated with higher body mass indexCross-sectional cohort of adultsMetabolic healthEffect of body mass indexHigher body mass indexPhysical health problemsLife stressCohort of adultsAssociated health consequencesEffects of early life stressMetabolic health effectsModerating effect of body mass indexChildhood Trauma Questionnaire subscalesCross-sectional cohortCardiometabolic healthAccelerated GrimAgeCardiometabolic diseasesMedical illnessHealth consequencesMass indexAuthor Correction: A multi-ancestry genetic study of pain intensity in 598,339 veterans
Toikumo S, Vickers-Smith R, Jinwala Z, Xu H, Saini D, Hartwell E, Pavicic M, Sullivan K, Xu K, Jacobson D, Gelernter J, Rentsch C, Stahl E, Cheatle M, Zhou H, Waxman S, Justice A, Kember R, Kranzler H. Author Correction: A multi-ancestry genetic study of pain intensity in 598,339 veterans. Nature Medicine 2024, 30: 2088-2088. PMID: 38714900, DOI: 10.1038/s41591-024-03024-4.Peer-Reviewed Original ResearchGreater Stress and Trauma Mediate Race-Related Differences in Epigenetic Age Between Black and White Young Adults in a Community Sample
Holloway T, Harvanek Z, Xu K, Gordon D, Sinha R. Greater Stress and Trauma Mediate Race-Related Differences in Epigenetic Age Between Black and White Young Adults in a Community Sample. Biological Psychiatry 2024, 95: s41. DOI: 10.1016/j.biopsych.2024.02.104.Peer-Reviewed Original Research353. Methylation of CRHR1 and CRHR2 is Associated With Lifetime Adversity, HPA-Axis Signaling Changes, and Obesity
Harvanek Z, Zhang X, Xu K, Sinha R. 353. Methylation of CRHR1 and CRHR2 is Associated With Lifetime Adversity, HPA-Axis Signaling Changes, and Obesity. Biological Psychiatry 2024, 95: s244. DOI: 10.1016/j.biopsych.2024.02.852.Peer-Reviewed Original ResearchStudy on Raman scattering spectroscopy of Mn-doped GaN grown by the ammonothermal method
Lu W, Li T, Ren G, Xia Z, Xie K, Li S, Shen L, Xu K. Study on Raman scattering spectroscopy of Mn-doped GaN grown by the ammonothermal method. CrystEngComm 2024, 26: 2166-2171. DOI: 10.1039/d4ce00093e.Peer-Reviewed Original ResearchRaman scattering spectroscopyValence stateGlow discharge mass spectrometryValence state of MnAmmonothermal methodX-ray photoelectron spectroscopyStates of MnGaN crystalsDoping of MnInteraction potential energyRaman scattering spectraDoping of MgPhotoelectron spectroscopyMn 2+Mn-doped GaNMass spectrometryMn 3X-rayScattering spectroscopyCrystalUnintentional dopingSpectroscopyPotential energyValenceGaNDNA methylation‐based telomere length is associated with HIV infection, physical frailty, cancer, and all‐cause mortality
Liang X, Aouizerat B, So‐Armah K, Cohen M, Marconi V, Xu K, Justice A. DNA methylation‐based telomere length is associated with HIV infection, physical frailty, cancer, and all‐cause mortality. Aging Cell 2024, 23: e14174. PMID: 38629454, PMCID: PMC11258465, DOI: 10.1111/acel.14174.Peer-Reviewed Original ResearchCancer prevalenceAll-cause mortalityVeterans Aging Cohort Study Biomarker CohortMortality riskPhysiological frailtyVACS IndexIncreased risk of all-cause mortalityRisk of all-cause mortalityCancer registry dataHigher cancer prevalenceHIV infectionElectronic medical recordsSelf-reported raceCoronary heart diseaseAssociated with HIV infectionIndicator of cellular agingPhysical frailtyRegistry dataSmoking statusWomen's Interagency HIV Study cohortAlcohol consumptionShorter TLTelomere lengthMedical recordsPeripheral blood mononuclear cellsInvestigation and analysis of the current status of transjugular intrahepatic portosystemic shunt treatment for portal hypertension in China
Guo H, Niu M, Shao H, Han X, Zhao J, Sun J, Fang Z, Xiong B, Zhu X, Ren W, Yuan M, Yu S, Lyu W, Zhang X, Zhang C, Li L, Luo X, Song Y, Ma Y, Dang T, Xiang H, Jin Y, Xue H, Jin G, Li X, Li J, Zhou S, Yu C, He S, Yu L, Zu H, Ma J, Lei Y, Xu K, Qi X. Investigation and analysis of the current status of transjugular intrahepatic portosystemic shunt treatment for portal hypertension in China. Chinese Journal Of Radiology 2024, 58: 437-443. DOI: 10.3760/cma.j.cn112149-20231113-00384.Peer-Reviewed Original ResearchTransjugular intrahepatic portosystemic shuntTransjugular intrahepatic portosystemic shunt treatmentPortal hypertensionPortal pressure gradient measurementCavernous transformationConventional anticoagulationPressure gradient measurementIndications of transjugular intrahepatic portosystemic shuntFollow-upTIPS operationPortal vein cavernous transformationTransjugular intrahepatic portosystemic shunt stentDuration of anticoagulationTreat portal hypertensionPostoperative follow-upIntrahepatic portosystemic shuntPrevention of rebleedingRoutine follow-upEarly-TIPSSurgical indicationsDomestic instrumentsShunt treatmentPortosystemic shuntPortal veinEmbolic materialComputationally inferred cell-type specific epigenome-wide DNA methylation analysis unveils distinct methylation patterns among immune cells for HIV infection in three cohorts
Zhang X, Hu Y, Vandenhoudt R, Yan C, Marconi V, Cohen M, Wang Z, Justice A, Aouizerat B, Xu K. Computationally inferred cell-type specific epigenome-wide DNA methylation analysis unveils distinct methylation patterns among immune cells for HIV infection in three cohorts. PLOS Pathogens 2024, 20: e1012063. PMID: 38466776, PMCID: PMC10957090, DOI: 10.1371/journal.ppat.1012063.Peer-Reviewed Original ResearchCD4+ T cellsEpigenome-wide association studiesPeripheral blood mononuclear cellsHIV infectionHIV pathogenesisT cellsCpG sitesNatural killer (NK) cellsCell typesAssociated with HIV infectionCD8+ T cellsMethylation patternsCpG methylationDNA methylationEpigenome-wide DNA methylation analysisBlood mononuclear cellsImmune cell typesDifferentially methylated CpG sitesUnique CpG sitesDifferential CpG methylationDNA methylation analysisSignificant CpG sitesArray-based methodsGene set enrichment analysisComputational deconvolution methodsNano-indentation study of dislocation evolution in GaN-based laser diodes
Chen J, Su X, Wang G, Niu M, Li X, Xu K. Nano-indentation study of dislocation evolution in GaN-based laser diodes. Discover Nano 2024, 19: 40. PMID: 38453741, PMCID: PMC10920521, DOI: 10.1186/s11671-024-03983-0.Peer-Reviewed Original ResearchSlip systemsBasal slip systemNano-indentation studiesBehavior of dislocationsNano-indentation techniquePyramidal slip planesDensity of dislocationsP-GaN layerDislocation evolutionGaN-based laser diodesMismatch stressBurgers vectorGaN-based LDSlip planesLaser diodeMulti-LayerMotion behaviorStrained layersDislocationLayerA multi-ancestry genetic study of pain intensity in 598,339 veterans
Toikumo S, Vickers-Smith R, Jinwala Z, Xu H, Saini D, Hartwell E, Pavicic M, Sullivan K, Xu K, Jacobson D, Gelernter J, Rentsch C, Stahl E, Cheatle M, Zhou H, Waxman S, Justice A, Kember R, Kranzler H. A multi-ancestry genetic study of pain intensity in 598,339 veterans. Nature Medicine 2024, 30: 1075-1084. PMID: 38429522, DOI: 10.1038/s41591-024-02839-5.Peer-Reviewed Original ResearchPain intensityChronic painTreat chronic painCalcium channel blockersCross-ancestry meta-analysisGenome-wide association studiesExperience of painSamples of European ancestryPain phenotypesFunctional genomics dataGABAergic neuronsCalcium channelsAnalgesic effectB-blockersDrug groupMillion Veteran ProgramPainSubstance use disordersQuality of lifeDrug repurposing analysisOpioid crisisGenetic architectureCausal genesGenetic lociGenomic dataMicrostructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask
Tao J, Xu Y, Li J, Cai X, Wang Y, Wang G, Cao B, Xu K. Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask. Japanese Journal Of Applied Physics 2024, 63: 025503. DOI: 10.35848/1347-4065/ad1e88.Peer-Reviewed Original ResearchGraphene maskEpitaxial lateral overgrowth-GaNEpitaxial lateral overgrowthTwo-dimensional materialsGrowth of GaNHigh-quality GaNHexagonal grapheneELOG GaNGaN growth processGraphene surfaceThreading dislocation densityLattice mismatchGrapheneGaNLateral overgrowthPL spectraHeterogeneous substratesDislocation densityRelaxationGaN.Growth processStress relaxationSpectraNitrideGPaThe growth of epitaxial graphene on SiC and its metal intercalation: a review
Yang D, Ma F, Bian X, Xia Q, Xu K, Hu T. The growth of epitaxial graphene on SiC and its metal intercalation: a review. Journal Of Physics Condensed Matter 2024, 36: 173003. PMID: 38237180, DOI: 10.1088/1361-648x/ad201a.Peer-Reviewed Original ResearchEpitaxial grapheneMetal intercalationGrowth of epitaxial grapheneHigh-quality epitaxial grapheneSi-based semiconductor technologyHigh-performance electronic devicesElectronic statesAtomic structureGrapheneSemiconductor technologyElectronic devicesSiCFabrication processStructural evolutionGrowth mechanismIntercalation effectSiC.Modified EGMetalIntercalationDislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation
Chen J, Chen K, Su X, Niu M, Wang Q, Xu K. Dislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation. Thin Solid Films 2024, 791: 140240. DOI: 10.1016/j.tsf.2024.140240.Peer-Reviewed Original Research
2023
Structure and Cathodoluminescence Properties in Tb3+ and Eu3+ Doped AlN Films
Luo X, Wang X, Meng H, Chen H, Zeng X, Gao X, Mao H, Xu K. Structure and Cathodoluminescence Properties in Tb3+ and Eu3+ Doped AlN Films. Physica Status Solidi (a) – Applications And Materials Science 2023, 221 DOI: 10.1002/pssa.202300625.Peer-Reviewed Original ResearchAlN filmsTb 3Non-radiative resonant energy transferEu 3Cathodoluminescence propertiesX-ray diffractionResonant energy transferEnergy transfer mechanismInternal compressive stressIon implantationChromaticity coordinatesRaman scatteringColor temperatureEnergy transferFilmsTransfer mechanismScatteringCrystal structureTb3Dose ratioFirst timeCompressive stressDiffractionAlN hostPropertiesReply to: Genetic differentiation at probe SNPs leads to spurious results in meQTL discovery
Cheng Y, Li B, Zhang X, Aouizerat B, Zhao H, Xu K. Reply to: Genetic differentiation at probe SNPs leads to spurious results in meQTL discovery. Communications Biology 2023, 6: 1296. PMID: 38129596, PMCID: PMC10739901, DOI: 10.1038/s42003-023-05646-9.Peer-Reviewed Original ResearchGrowth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition
Wang S, Xu J, Wang Y, Su X, Zheng Y, Bao N, Xu K. Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition. Crystal Growth & Design 2023, 24: 331-338. DOI: 10.1021/acs.cgd.3c01042.Peer-Reviewed Original ResearchMetal-organic chemical vapor depositionGaN filmsChemical vapor depositionSurface acoustic wave devicesVapor depositionSingle crystalline GaN filmsAcoustic wave devicesLGS substrateHigh frequency rangeSAW devicesPiezoelectric propertiesWave devicesGood optical propertiesFilm qualityCompressive stressGaN materialEpitaxial growthGa dropletsMetal nitridesEpitaxial relationshipFilmsGas elementsHigh temperatureLGS crystalMixed dislocationsVertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall
Liu X, Li B, Wu J, Li J, Yue W, Zhu R, Wang Q, Li X, Ben J, He W, Chiu H, Xu K, Zhong Z. Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall. IEEE Journal Of The Electron Devices Society 2023, 12: 34-38. DOI: 10.1109/jeds.2023.3340512.Peer-Reviewed Original ResearchJunction Barrier SchottkyPower device figureState resistance RonHigh voltage applicationsFree-standing GaN substratesElectric field distributionSlanted sidewallsBreakdown voltage VBREdges of devicesVertical GaNJBS diodesVoltage applicationsDevice figureResistance RonHigh voltageGaN substrateField distributionSidewallsGW/cm2SchottkyGreat potentialDevicesVoltageRONDiodesInterband transition physics from the absorption edge in GaN: New prospects from numerical analysis
Han S, Yi J, Song W, Chen K, Zheng S, Zhang Y, Xu K. Interband transition physics from the absorption edge in GaN: New prospects from numerical analysis. AIP Advances 2023, 13: 125016. DOI: 10.1063/5.0180220.Peer-Reviewed Original ResearchAbsorption/emissionElectric fieldOptical logic devicesTunable electric fieldStrong polarization effectsAbundant surface statesQuantum statesTransition physicsAbsorption edgeSurface statesBand structureEmission edgeExperimental absorptionReasonable bandgapBrillouin approximationWentzel-KramersPolarization effectsGaN samplesField strengthLogic devicesNumerical simulationsNonuniform fieldEmissionNon-uniform fieldField